BUK652R1-30C,127 NXP Semiconductors, BUK652R1-30C,127 Datasheet - Page 9

• Manufacturer Part Number: BUK652R1-30C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK652R1-30C,127

• Input Capacitance (ciss) @ Vds: 10918pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 168nC @ 10V
• Power - Max: 263W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK652R1-30C
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Drain-source on-state resistance as a function
(mΩ)
R
V
DSon
GS (th)
(V)
7.5
2.5
10
3
2
1
0
5
0
-60
junction temperature
of drain current; typical values
0
25
0
V
GS
(V) = 3.8
max
min
typ
60
50
4.0
120
75
All information provided in this document is subject to legal disclaimers.
003aae297
003a a c337
T
I
D
j
(A)
(°C)
10.0
4.5
5.0
6.0
Rev. 02 — 16 December 2010
180
100
Fig 12. Sub-threshold drain current as a function of
Fig 14. Drain-source on-state resistance as a function
R
(m Ω )
10
10
10
10
10
10
(A)
I
DSon
D
N-channel TrenchMOS intermediate level FET
-1
-2
-3
-4
-5
-6
40
30
20
10
0
gate-source voltage
of drain current; typical values
0
0
3.0
min
20
1
BUK652R1-30C
3.2
3.4
40
typ
2
V
GS
(V) = 3.5
© NXP B.V. 2010. All rights reserved.
V
10.0
3.8
4.0
4.5
GS
3.6
I
003aab271
D
003aaf017
max
(A)
(V)
60
3
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