PSMN2R8-40PS,127 NXP Semiconductors, PSMN2R8-40PS,127 Datasheet

PSMN2R8-40PS,127

Manufacturer Part Number

PSMN2R8-40PS,127

Description

MOSFET N-CH 40V SOT78

Manufacturer

NXP Semiconductors

Datasheet

1.PSMN2R8-40PS127.pdf (16 pages)

Specifications of PSMN2R8-40PS,127

Input Capacitance (ciss) @ Vds

4491pF @ 20V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

2.8 mOhm @ 10A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

100A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

71nC @ 10V

Power - Max

211W

Mounting Type

Through Hole

Package / Case

TO-220-3

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2.3 mOhms

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Power Dissipation

211 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

Table 1.

Symbol

Static characteristics

tot

DSon

PSMN2R8-40PS

N-channel TO220 40 V 2.8 mΩ standard level MOSFET

Rev. 01 — 1 November 2010

High efficiency due to low switching

and conduction losses

DC-to-DC converters

Load switching

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

junction temperature

drain-source on-state

resistance

Conditions

see

≥ 25 °C; T

= 100 °C; see

= 25 °C; see

Figure 1

Figure 14

Figure 15

= 25 °C; V

= 25 °C; see

= 10 V; I

≤ 175 °C

= 10 A;

Figure

Suitable for standard level gate drive

sources

Motor control

Server power supplies

Figure

Figure 2

= 10 V;

13;

[1]

[2]

Min

-55

Product data sheet

Typ

2.3

Max Unit

100

211

175

4.5

2.8

°C

mΩ

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PSMN2R8-40PS,127 Summary of contents

Page 1

... PSMN2R8-40PS N-channel TO220 40 V 2.8 mΩ standard level MOSFET Rev. 01 — 1 November 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... drain-source avalanche I = 100 energy unclamped; R Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 November 2010 PSMN2R8-40PS Min Typ = Figure 16 ° j(init) ≤ sup = 50 Ω GS Graphic symbol ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 November 2010 PSMN2R8-40PS Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure °C; see Figure -55 - ° ...

Page 4

... PSMN2R8-40PS Product data sheet N-channel TO220 40 V 2.8 mΩ standard level MOSFET = DSon DS D (1) 1 All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 November 2010 PSMN2R8-40PS 10 μs 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. 003aad385 ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN2R8-40PS Product data sheet N-channel TO220 40 V 2.8 mΩ standard level MOSFET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 November 2010 PSMN2R8-40PS Min Typ Max - 0.4 0.7 003aad247 t p δ ...

Page 6

... DS GS see Figure 16; see Figure see D DS see Figure MHz °C; see Figure 0.8 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 November 2010 PSMN2R8-40PS Min Typ Max = -55 ° ° 150 - 10 100 = 25 ° 100 ...

Page 7

... DS 003aad431 100 ( 0.9 1.2 V (V) DS Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 November 2010 PSMN2R8-40PS Min Typ = 25 ° ° 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values © NXP B.V. 2010. All rights reserved. ...

Page 8

... V (V) GS Fig 10. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 November 2010 PSMN2R8-40PS 003aad438 100 I (A) D 03aa35 min typ max (V) GS © NXP B.V. 2010. All rights reserved. ...

Page 9

... Fig 14. Normalized drain-source on-state resistance factor as a function of junction temperature. All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 November 2010 PSMN2R8-40PS 003aad280 max typ min 0 60 120 180 T (°C) j 003aad696 0 60 120 ...

Page 10

... N-channel TO220 40 V 2.8 mΩ standard level MOSFET 003aad432 5.5 6 100 I (A) D Fig 16. Gate charge waveform definitions 003aad435 (nC) G Fig 18. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 November 2010 PSMN2R8-40PS GS(pl) V GS(th GS1 GS2 G(tot (pF ...

Page 11

... Product data sheet N-channel TO220 40 V 2.8 mΩ standard level MOSFET 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 November 2010 PSMN2R8-40PS 003aad434 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...

Page 12

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 November 2010 PSMN2R8-40PS mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...

Page 13

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN2R8-40PS v.1 20101101 PSMN2R8-40PS Product data sheet N-channel TO220 40 V 2.8 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. ...

Page 14

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 November 2010 PSMN2R8-40PS © NXP B.V. 2010. All rights reserved ...

Page 15

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 November 2010 PSMN2R8-40PS Trademarks © NXP B.V. 2010. All rights reserved ...

Page 16

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 November 2010 Document identifier: PSMN2R8-40PS ...

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