BUK6607-75C,118 NXP Semiconductors, BUK6607-75C,118 Datasheet - Page 9

• Manufacturer Part Number: BUK6607-75C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6607-75C,118

• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Power - Max: 204W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 204 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6607-75C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
V
−1
V
V
V
GS
GS(pl)
DS
GS(th)
GS
= 0 V; f = 1 MHz
C
C
C
oss
rss
iss
Q
GS1
I
1
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
DS
All information provided in this document is subject to legal disclaimers.
003aaa508
003aae552
(V)
Rev. 2 — 17 November 2010
10
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of
V
(V)
(A)
GS
I
160
120
S
10
80
40
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
T
V
0
0
j
GS
= 25°C; I
= 0 V
V
T
0.4
DS
j
= 175 °C
D
= 14 V
= 25 A
50
BUK6607-75C
N-channel TrenchMOS FET
0.8
T
j
100
= 25 °C
V
1.2
DS
Q
© NXP B.V. 2010. All rights reserved.
G
= 60 V
V
003aae551
003aae554
(nC)
SD
(V)
150
1.6
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