BUK654R8-40C,127 NXP Semiconductors, BUK654R8-40C,127 Datasheet - Page 7

• Manufacturer Part Number: BUK654R8-40C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK654R8-40C,127

• Input Capacitance (ciss) @ Vds: 5200pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 88nC @ 10V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK654R8-40C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
I
100
fs
D
100
80
60
40
20
75
50
25
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
10.0
Parameter
source-drain voltage
reverse recovery time
recovered charge
5.0
0.5
20
4.5
…continued
40
1
1.5
60
V
GS
All information provided in this document is subject to legal disclaimers.
003aae318
003aae320
(V) = 4
V
I
D
DS
(A)
(V)
3.8
3.6
3.4
3.2
Conditions
I
see
I
V
Rev. 03 — 12 October 2010
S
S
80
GS
2
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 25 V
R
(A)
(mΩ)
I
D
DSon
100
N-channel TrenchMOS intermediate level FET
80
60
40
20
20
15
10
5
0
0
j
function of gate-source voltage; typical values
of gate-source voltage; typical values.
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
= 25 °C;
0
0
T
5
j
= 175 °C
2
BUK654R8-40C
Min
-
-
-
10
T
j
= 25 °C
4
Typ
0.85
42
65
15
© NXP B.V. 2010. All rights reserved.
V
GS
003aae319
003aae347
V
GS
(V)
Max
1.2
-
-
(V)
20
6
Unit
V
ns
nC
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