BUK6211-75C,118 NXP Semiconductors, BUK6211-75C,118 Datasheet - Page 9

• Manufacturer Part Number: BUK6211-75C,118
• Description: MOSFET N-CH TRENCH DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6211-75C,118

• Input Capacitance (ciss) @ Vds: 5251pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 74A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 74 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6211-75C
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
20
14V
40
60
V
(A)
I
DS
S
200
150
100
= 60V
50
0
80
0
All information provided in this document is subject to legal disclaimers.
003aae414
Q
G
(nC)
Rev. 02 — 28 September 2010
100
T
0.5
j
= 175 °C
1
Fig 14. Gate charge waveform definitions
T
j
= 25 °C
1.5
V
V
V
V
GS(pl)
003aae416
V
DS
GS(th)
GS
SD
(V)
2
Q
GS1
I
Q
D
GS
Q
GS2
BUK6211-75C
N-channel TrenchMOS FET
Q
G(tot)
Q
GD
© NXP B.V. 2010. All rights reserved.
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