BUK6213-30C,118 NXP Semiconductors, BUK6213-30C,118 Datasheet - Page 7

• Manufacturer Part Number: BUK6213-30C,118
• Description: MOSFET N-CH TRENCH DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6213-30C,118

• Input Capacitance (ciss) @ Vds: 1108pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 19.5nC @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK6213-30C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
g
(S)
(A)
I
fs
D
40
30
20
10
50
40
30
20
10
0
0
drain current; typical values
function of gate-source voltage; typical values
T
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
j
Characteristics
= 25 °C; V
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
10
T
DS
j
2
= 175 °C
= 15 V
20
…continued
3
30
T
4
j
= 25 °C
40
All information provided in this document is subject to legal disclaimers.
003aae916
003aae918
5
V
I
GS
D
(A)
(V)
Conditions
I
see
I
V
S
S
Rev. 01 — 4 October 2010
50
GS
6
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 25 V
R
(mΩ)
DSon
(A)
I
D
N-channel TrenchMOS intermediate level FET
60
40
20
30
25
20
15
10
0
5
0
j
function of drain-source voltage; typical values
of gate-source voltage; typical values
T
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
= 25 °C;
0
j
= 25 °C; t
10
0.5
4
p
8
= 300 μs
6
BUK6213-30C
Min
-
-
-
1
8
5
V
GS
Typ
0.95
31.9
25.4
(V) = 4.5
1.5
12
© NXP B.V. 2010. All rights reserved.
V
003aae919
003aae917
V
3.8
3.6
4
3.4
3.2
GS
DS
Max
1.2
-
-
(V)
(V)
16
2
Unit
V
ns
nC
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