BUK754R0-40C,127 NXP Semiconductors, BUK754R0-40C,127 Datasheet - Page 9

• Manufacturer Part Number: BUK754R0-40C,127
• Description: MOSFET N-CH 40V 100A TO-220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK754R0-40C,127

• Input Capacitance (ciss) @ Vds: 5708pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Power - Max: 203W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5226

NXP Semiconductors
BUK754R0-40C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
10
10
10
C
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
DS
003aaa508
003aac585
(V)
C
C
C
iss
oss
rss
10
2
Rev. 02 — 20 July 2010
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of
V
(A)
(V)
I
120
S
GS
10
90
60
30
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
0
0
I
T
D
N-channel TrenchMOS standard level FET
j
= 25 A
= 25 °C
25
175 ° C
V
0.5
DS
BUK754R0-40C
= 14V
50
1
T
j
= 25 ° C
75
© NXP B.V. 2010. All rights reserved.
V
32V
Q
SD
003aac586
003aac587
G
(V)
(nC)
100
1.5
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