IRFHS8342TR2PBF International Rectifier, IRFHS8342TR2PBF Datasheet - Page 6

• Manufacturer Part Number: IRFHS8342TR2PBF
• Description: MOSFET N-CH 30V 8.8A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHS8342TR2PBF

• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 10V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: 6-PowerVQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 4.2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFHS8342TR2PBFTR

IRFHS8342PbF
0
6
Fig 17a. Switching Time Test Circuit
Fig 16a. Gate Charge Test Circuit
1K
≤ 0.1
≤ 1
S
DUT
L
+
-
VCC
90%
V
10%
V
Vgs(th)
DS
Qgs1 Qgs2
GS
Vds
Fig 17b. Switching Time Waveforms
Fig 16b. Gate Charge Waveform
t
d(on)
t
Qgd
r
t
d(off)
Qgodr
t
f
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Vgs
Id