IRFHS8342TR2PBF International Rectifier, IRFHS8342TR2PBF Datasheet - Page 5

• Manufacturer Part Number: IRFHS8342TR2PBF
• Description: MOSFET N-CH 30V 8.8A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHS8342TR2PBF

• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 10V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: 6-PowerVQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 4.2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFHS8342TR2PBFTR

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Fig 12. On-Resistance vs. Gate Voltage
35
30
25
20
15
10

5
0
‚
+
-
V GS, Gate -to -Source Voltage (V)
5
ƒ
+
-
•
•
•
•
Fig 15.
SD
10
600
500
400
300
200
100
•
•
•
0
1E-5
T J = 25°C
T J = 125°C
15
-
G
I D = 8.5A
„
1E-4
Fig 14. Typical Power vs. Time
HEXFET
+
20
1E-3
Time (sec)
®
+
-
Power MOSFETs
Re-Applied
Voltage
1E-2
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 13. Typical On-Resistance vs. Drain Current
1E-1
30
25
20
15
10
5
P.W.
SD
DS
0
Waveform
Waveform
1E+0
Ripple ≤ 5%
Body Diode
10
Period
for N-Channel
Body Diode Forward
Diode Recovery
20
Current
I D , Drain Current (A)
dv/dt
Forward Drop
IRFHS8342PbF
di/dt
30
Vgs = 4.5V
D =
40
Period
P.W.
50
Vgs = 10V
V
V
I
60
SD
GS
DD
=10V
70
5