IRLML6346TRPBF International Rectifier, IRLML6346TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRLML6346TRPBF
• Description: MOSFET N-CH 30V 3.4A SOT23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML6346TRPBF

• Input Capacitance (ciss) @ Vds: 270pF @ 24V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 63 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 2.9nc @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 63 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 3.4 A
• Power Dissipation: 1.3 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 2.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML6346TRPBFTR

IRLML6346TRPbF
V
∆V
R
V
I
I
R
gfs
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
Electric Characteristics @ T
Source - Drain Ratings and Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
g
gs
gd
rr
Symbol
Symbol
2
(BR)DSS
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
™
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.5
9.5
30
0.02
0.13
–––
–––
–––
–––
–––
–––
270
–––
–––
–––
0.8
3.9
2.9
1.1
3.3
4.0
4.9
8.8
2.7
46
59
12
32
21
-100
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.1
1.0
1.3
1.2
4.1
63
80
17
13
V/°C
mΩ
nC
nC
µA
nA
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
= 3.4A
= 1.0A
= 25°C, I
= 25°C, V
= 6.8Ω
= 0V, I
= 4.5V, I
= 2.5V, I
= V
=24V, V
= 24V, V
= 12V
= -12V
= 10V, I
=15V
= 4.5V
=15V
= 4.5V
= 0V
= 24V
GS
d
, I
Conditions
Conditions
D
d
S
D
D
GS
= 250µA
R
D
D
GS
= 3.4A, V
= 10µA
= 3.4A
= 24V, I
= 3.4A
= 2.7A
= 0V
= 0V, T
d
www.irf.com
D
d
d
= 1mA
F
GS
G
=1.3A
J
= 125°C
= 0V
D
S
d