IRLML6346TRPBF International Rectifier, IRLML6346TRPBF Datasheet

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IRLML6346TRPBF

Manufacturer Part Number
IRLML6346TRPBF
Description
MOSFET N-CH 30V 3.4A SOT23
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLML6346TRPBF

Input Capacitance (ciss) @ Vds
270pF @ 24V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
63 mOhm @ 3.4A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
1.1V @ 10µA
Gate Charge (qg) @ Vgs
2.9nc @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
63 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
3.4 A
Power Dissipation
1.3 W
Mounting Style
SMD/SMT
Gate Charge Qg
2.9 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML6346TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLML6346TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLML6346TRPBF
0
Company:
Part Number:
IRLML6346TRPBF
Quantity:
9 000
Company:
Part Number:
IRLML6346TRPBF
Quantity:
15 029
Features and Benefits
www.irf.com
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Application(s)
• Load/ System Switch
Notes  through
V
I
I
I
P
P
V
T
R
R
Features
Industry-standard SOT-23 Package
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer Qualification
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J,
DS
D
D
GS
θJA
θJA
@ T
@ T
T
@T
@T
(@V
(@V
STG
R
R
Symbol
Symbol
A
A
A
A
V
DS(on) max
DS(on) max
= 25°C
= 70°C
= 25°C
= 70°C
GS
GS
GS Max
V
DS
= 4.5V)
= 2.5V)
are on page 10
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient (t<10s)
± 12
30
63
80
Parameter
Parameter
mΩ
mΩ
V
V
GS
GS
f
@ 10V
@ 10V
*
6
IRLML6346TRPbF


Typ.
results in Multi-vendor compatibility
–––
–––
HEXFET Power MOSFET
-55 to + 150

Max.
0.01
± 12
3.4
2.7
1.3
0.8
30
17
Benefits
Environmentally friendly
Increased Reliability
Micro3
IRLML6346TRPbF
Max.
100
99
TM
(SOT-23)
PD - 97584
10/28/2010
Units
Units
W/°C
°C/W
°C
W
V
A
V
1

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IRLML6346TRPBF Summary of contents

Page 1

... IRLML6346TRPbF mΩ mΩ Parameter @ 10V GS @ 10V GS Parameter Typ 97584 HEXFET Power MOSFET  TM Micro3 (SOT-23) IRLML6346TRPbF Benefits results in Multi-vendor compatibility Environmentally friendly Increased Reliability Max. Units V 30 3.4 2 1.3 W 0.8 0.01 W/°C ± - 150 °C Max. Units ––– ...

Page 2

... IRLML6346TRPbF Electric Characteristics @ T Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I DSS Drain-to-Source Leakage Current I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage R Internal Gate Resistance G gfs Forward Transconductance ...

Page 3

... Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150° 25° 15V ≤60µs PULSE WIDTH 0.1 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRLML6346TRPbF 100 VGS TOP 10V 4.5V 3.0V 2.5V 2.3V 2.0V 10 1.8V BOTTOM 1.5V 1 0.1 0.1 ...

Page 4

... IRLML6346TRPbF 10000 0V MHZ C iss = SHORTED C rss = oss = 1000 C iss C oss 100 C rss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 150°C 1 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 14.0 12.0 10.0 8.0 6.0 4.0 2.0 ...

Page 5

... D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com IRLML6346TRPbF Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 d(on) Fig 10b. Switching Time Waveforms 0.001 0.01 ...

Page 6

... IRLML6346TRPbF 110 100 25° GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance vs. Gate Voltage Id Vgs Qgodr Qgd Fig 14a. Basic Gate Charge Waveform 3. 125° Fig 13. Typical On-Resistance vs. Drain Vds 0 Vgs(th) 1K 20K Qgs1 Qgs2 Fig 14b. Gate Charge Test Circuit Vgs = 2.5V Vgs = 4.5V ...

Page 7

... 10µ 250µA 0.4 0.2 0.0 -75 -50 - Temperature ( °C ) Fig 15. Typical Threshold Voltage vs. Junc- tion Temperature www.irf.com IRLML6346TRPbF 1000 800 600 400 200 0 75 100 125 150 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Time (sec) Typical Power vs. Time 7 ...

Page 8

... IRLML6346TRPbF ™ 0.15 [0.006 ™ 0.10 [0.004 0.20 [0.008 NOTES: Recommended Footprint 0.972 0.950 2.742 0.802 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 1.900 5. DATUM A AND DETERMINED AT DATUM PLANE H. ...

Page 9

... TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. www.irf.com IRLML6346TRPbF 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 4.1 ( .161 ) 1.65 ( .065 ) 3.9 ( .154 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 1.1 ( .043 ) 3.9 ( .154 ) ...

Page 10

... IRLML6346TRPbF Orderable part number Package Type IRLML6346TRPbF Micro3™(SOT-23) † Qualification information Qualification level Moisture Sensitivity Level RoHS compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. ...

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