BUK9Y09-40B,115 NXP Semiconductors, BUK9Y09-40B,115 Datasheet - Page 9
![MOSFET N-CH 40V 75A LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
BUK9Y09-40B,115
Manufacturer Part Number
BUK9Y09-40B,115
Description
MOSFET N-CH 40V 75A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9Y09-40B115.pdf
(14 pages)
Specifications of BUK9Y09-40B,115
Input Capacitance (ciss) @ Vds
2866pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
30nC @ 5V
Power - Max
105.3W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5523-2
NXP Semiconductors
BUK9Y09-40B
Product data sheet
Fig 14. Input, output and reverse transfer capacitances
Fig 16. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
(pF)
10
10
10
C
4
3
2
10
as a function of drain-source voltage; typical
values.
-1
1
(A)
I
D
60
40
20
0
0
10
T
j
= 175 °C
1
V
All information provided in this document is subject to legal disclaimers.
DS
C
C
003aac867
iss
oss
C
(V)
rss
10
2
2
Rev. 04 — 7 April 2010
T
j
= 25 °C
3
003aac868
V
Fig 15. Reverse diode current as a function of reverse
GS
(V)
(A)
I
100
S
80
60
40
20
4
0
diode voltage; typical values.
0
N-channel TrenchMOS logic level FET
0.3
T
j
= 175 °C
BUK9Y09-40B
0.6
T
0.9
j
© NXP B.V. 2010. All rights reserved.
= 25 °C
003aac870
V
SD
(V)
1.2
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