BUK763R6-40C,118 NXP Semiconductors, BUK763R6-40C,118 Datasheet - Page 7

• Manufacturer Part Number: BUK763R6-40C,118
• Description: MOSFET N-CH 40V 100A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK763R6-40C,118

• Input Capacitance (ciss) @ Vds: 5708pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Power - Max: 203W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5295-2

NXP Semiconductors
BUK763R6-40C
Product data sheet
Fig 5.
Fig 7.
(A)
I
10
10
10
10
10
10
D
120
(S)
g
90
60
30
fs
−1
−2
−3
−4
−5
−6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
Sub-threshold drain current as a function of
0
0
15
2
min
30
typ
4
45
max
V
All information provided in this document is subject to legal disclaimers.
GS
003aac583
I
D
(V)
(A)
03aa35
60
6
Rev. 04 — 16 June 2010
Fig 6.
Fig 8.
(A)
(A)
I
I
180
150
120
D
150
D
120
90
60
30
90
60
30
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
0
0
20 10
N-channel TrenchMOS standard level FET
5.8
1.5
2
T
j
= 175 ° C
BUK763R6-40C
4
3
25 ° C
V
GS
4.5
6
© NXP B.V. 2010. All rights reserved.
(V) =
V
V
003aac584
GS
003aac818
DS
(V)
5.5
5.2
4.8
4.5
(V)
5
8
6
7 of 14