BUK9Y27-40B,115 NXP Semiconductors, BUK9Y27-40B,115 Datasheet - Page 9

• Manufacturer Part Number: BUK9Y27-40B,115
• Description: MOSFET N-CH 40V 34A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y27-40B,115

• Input Capacitance (ciss) @ Vds: 959pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Power - Max: 59.4W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5528-2

NXP Semiconductors
BUK9Y27-40B
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
5
4
3
2
1
0
charge; typical values.
0
V
DS
4
= 14V
8
(A)
I
S
50
40
30
20
10
0
V
DS
Q
0
All information provided in this document is subject to legal disclaimers.
G
003aac874
= 32V
(nC)
12
0.3
Rev. 04 — 7 April 2010
T
j
= 175 °C
0.6
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
0.9
4
3
2
10
as a function of drain-source voltage; typical
values.
T
j
-1
= 25 °C
003aac875
V
SD
(V)
N-channel TrenchMOS logic level FET
1.2
1
BUK9Y27-40B
10
© NXP B.V. 2010. All rights reserved.
C
C
V
C
DS
iss
oss
003aac876
rss
(V)
10
2
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