PSMN045-80YS,115 NXP Semiconductors, PSMN045-80YS,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN045-80YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN045-80YS,115

• Input Capacitance (ciss) @ Vds: 675pF @ 40V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 12.5nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A, 24 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5587-2

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN045-80YS
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN045-80YS
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
source
source
source
gate
mounting base; connected to
drain
Table 1.
Package
Name
LFPAK
Symbol
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
DS(AL)S
GD
G(tot)
Quick reference data
Parameter
gate-drain charge
total gate charge
non-repetitive
drain-source
avalanche energy
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 October 2010
Simplified outline
SOT669 (LFPAK)
…continued
N-channel LFPAK 80 V 45 mΩ standard level MOSFET
Conditions
V
V
see
V
I
R
D
GS
DS
GS
GS
1 2 3 4
= 22 A; V
Figure 15
= 10 V; I
= 40 V; see
= 10 V; T
= 50 Ω; unclamped
mb
sup
D
j(init)
= 15 A;
≤ 80 V;
Figure
= 25 °C;
Graphic symbol
14;
PSMN045-80YS
mbb076
G
Min
-
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
3.1
12.5 -
-
Version
Max Unit
-
18
2 of 15
nC
nC
mJ