SCS112AGC Rohm Semiconductor, SCS112AGC Datasheet - Page 3

• Manufacturer Part Number: SCS112AGC
• Description: DIODE SCHOTTKY 600V 12A TO220AC
• Manufacturer: Rohm Semiconductor

Specifications of SCS112AGC

• Diode Type: Silicon Carbide Schottky
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 12A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Mounting Type: *
• Package / Case: *
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 12 A
• Max Surge Current: 48 A
• Configuration: Single
• Forward Voltage Drop: 1.5 V, 1.6 V
• Maximum Reverse Leakage Current: 240 uA
• Maximum Power Dissipation: 80 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Forward (vf) (max) @ If: -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

1.888.775.ROHM
Silicon Carbide Schottky Barrier Diodes
from ROHM Semiconductor
600V Diodes
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SCS106AGC
SCS108AGC
SCS110AGC
SCS112AGC
SCS120AGC
The SCS1xxAGC series of 600 V silicon carbide
Schottky barrier diodes offers industry-leading low
forward voltage and fast recovery time. They maintain
low forward voltage (V
temperature range which results in lower power
Applications
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Important Features / Advantages
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DESIGN
NOTE
SCS106AGC, SCS108AGC, SCS110AGC, SCS112AGC, and SCS120AGC
Part No.
Power Factor Correction / SMPS
Solar Inverters
Motor Drives
Extremely low switching loss
Excellent thermal conductivity and high operating temperature
eliminates or greatly reduces heat sink requirements
Reduced EMI emission
With an SiC Schottky barrier diode
(SBD), switching losses are reduced by
2/3 compared to a silicon fast recovery
diode (FRD).
(The Si FRD is used for comparison
since it has a comparable voltage rat-
ing to the SiC SBD.)
voltage (V)
Reverse
600
600
600
600
600
V
RM
Continuous
current (A)
forward
10
12
20
I
6
8
F
F
) over a wide operating
Tj = 25°C/150°C
1.5/1.6
1.5/1.6
1.5/1.6
1.5/1.6
1.5/1.6
V
RM (typ)
voltage (V)
Forward
SiC Performance Improvement over Si FRD
V
RM (max)
1.7
1.7
1.7
1.7
1.7
Tj = 25°C/150°C
2.0/10
2.4/12
4.0/20
1.2/6
1.6/8
I
R (typ)
current (µA)
Reverse
www.rohm.com/us
I
R (max)
120
160
200
240
400
dissipation (W)
dissipation under actual operating conditions. Low V
minimizes switching loss and enables high switching
frequency, resulting in smaller passives and smaller
end-product form factors.
power
Total
48
52
57
80
97
P
D
charge (nC)
Capacitive
12
15
16
22
35
Q
C
Switching
time (ns)
18
15
15
16
19
t
C
capacitance (pF)
V
R
= 1V/V
260/28
345/38
430/47
516/56
860/93
Total
C
R
= 600V
resistance
Thermal
(°C/W)
R
2.6
2.4
2.2
1.6
1.3
th(j-c)
CNA110004_sg
TO220AC 2L
TO220AC 2L
TO220AC 2L
TO220AC 2L
TO220AC 2L
Package
F