SCS112AGC Rohm Semiconductor, SCS112AGC Datasheet

DIODE SCHOTTKY 600V 12A TO220AC

SCS112AGC

Manufacturer Part Number
SCS112AGC
Description
DIODE SCHOTTKY 600V 12A TO220AC
Manufacturer
Rohm Semiconductor
Datasheets

Specifications of SCS112AGC

Diode Type
Silicon Carbide Schottky
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
12A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Mounting Type
*
Package / Case
*
Product
Schottky Diodes
Peak Reverse Voltage
600 V
Forward Continuous Current
12 A
Max Surge Current
48 A
Configuration
Single
Forward Voltage Drop
1.5 V, 1.6 V
Maximum Reverse Leakage Current
240 uA
Maximum Power Dissipation
80 W
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Forward (vf) (max) @ If
-
Current - Reverse Leakage @ Vr
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details
SCS112AG | SiC Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD.
http://www.rohm.com/products/discrete/sic/sic_schottky_barrier/scs112ag/print.html
[ Product description ]
Switching loss reduced, enabling high-speed switching . (2-pin package)
• Shorter recovery time
• Reduced temperature dependence
• High-speed switching possible
Copyright © 1997-2011 ROHM CO.,LTD.
Repetitive peak reverse voltage V
Reverse voltage(DC) V
Average rectified forward current I
Forward current surge peak I
Junction temperature Tj(ºC)
Storage temperature Tstg(ºC)
SiC Schottky Barrier Diodes
SCS112AG
Features
Product specifications
Rated parameters
Absolute maximum ratings (Ta=25ºC)
R
(V)
FSM
(A)
RM
O
(A)
(V)
Standard value
-55 to +150
600
600
150
12
48 60Hz/1cyc
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
Conditions
Outline
9.8x15.4(t=4.4)
Dimensions
Equivalent circuit
diagram
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2/16/2011

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