BYV25F-600,127 NXP Semiconductors, BYV25F-600,127 Datasheet - Page 2

• Manufacturer Part Number: BYV25F-600,127
• Description: DIODE ULT FAST 600V 5A TO-220AC
• Manufacturer: NXP Semiconductors

Specifications of BYV25F-600,127

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.9V @ 5A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 5A
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 568-5228

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYV25F-600
Product data sheet
Pin
1
2
mb
Type number
BYV25F-600
Symbol
V
V
V
I
I
I
T
T
F(AV)
FRM
FSM
stg
j
RRM
RWM
R
Symbol Description
K
A
K
Pinning information
Ordering information
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
storage temperature
junction temperature
cathode
anode
mounting base; cathode
TO-220AC
Package
Name
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
All information provided in this document is subject to legal disclaimers.
Conditions
DC
square-wave pulse; δ = 0.5 ;
T
see
square-wave pulse; δ = 0.5 ; t
T
t
T
t
T
p
p
Rev. 02 — 7 March 2011
mb
mb
j(init)
j(init)
Simplified outline
= 10 ms; sine-wave pulse;
= 8.3 ms; sine-wave pulse;
Figure 2
≤ 126 °C; see
≤ 126 °C
= 25 °C; see
= 25 °C; see
SOD59 (TO-220AC)
1
mb
2
Figure
Figure 3
Figure 3
1;
p
= 25 µs;
Graphic symbol
Enhanced ultrafast power diode
BYV25F-600
K
Min
-
-
-
-
-
-
-
-40
-
001aaa020
© NXP B.V. 2011. All rights reserved.
A
600
600
150
Version
SOD59
Max
600
5
10
60
66
150
Unit
V
V
V
A
A
A
A
°C
°C
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