STPS60L30CKY-TR STMicroelectronics, STPS60L30CKY-TR Datasheet - Page 3

• Manufacturer Part Number: STPS60L30CKY-TR
• Description: DIODE SCHOTTKY 30V 20-POWERSOIC
• Manufacturer: STMicroelectronics

Specifications of STPS60L30CKY-TR

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 490mV @ 30A
• Current - Reverse Leakage @ Vr: 2mA @ 30V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 30V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-11104-2

STPS60L30C-Y
Figure 1.
Figure 3.
Figure 5.
24
22
20
18
16
14
12
10
1.E+03
1.E+02
1.E+01
1.E+00
400
350
300
250
200
150
100
1.E-01
1.E-02
8
6
4
2
0
50
1.E-03
0
P
0
F(AV)
I (A)
M
I
(per diode, all anode pins connected)
I (mA)
0
M
R
(W)
5
δ = 0.5
δ = 0.05 δ = 0.1
t
Average forward power dissipation
versus average forward current
Non repetetive surge peak forward
current versus overload duration
(maximum values)
Reverse leakage current versus
reverse voltage applied (per diode)
(typical values)
10
5
(per diode, all anode pins connected)
1.E-02
15
10
δ = 0.2
T = 125 °C
T = 150 °C
T = 100 °C
T = 75 °C
T = 50 °C
T = 25 °C
20
j
j
j
j
j
j
15
25
1.E-01
δ = 0.5
30
20
35
T = 125 °C
c
T = 25 °C
T = 75 °C
25
c
c
Doc ID 18296 Rev 1
40
I
F(AV)
V (V)
t(s)
δ = 1
1.E+00
R
(A)
45
30
Figure 2.
Figure 4.
Figure 6.
10.0
35
30
25
20
15
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.1
5
0
1.E-05
0
I
F(AV)
(per diode, all anode pins connected)
Z
1
C(nF)
δ = t / T
th(j-c)
(per diode, all anode pins connected)
(A)
p
/R
th(j-c)
1.E-04
T
25
Single pulse
t
Average forward current versus
ambient temperature per diode
(δ = 0.5)
p
Relative variation of thermal
impedance, junction to case,
versus pulse duration
Junction capacitance versus
reverse voltage applied (per diode)
(typical values)
1.E-03
50
T
amb
1.E-02
(°C)
75
10
R
R
th(j-a)
th(j-a)
R
R
1.E-01
th(j-a)
th(j-a)
100
= 10 °C/W
= 10 °C/W
= R
= R
Characteristics
th(j-c)
th(j-c)
V
1.E+00
osc
125
F = 1 MHz
T = 25 °C
= 30 mV
j
V (V)
t (s)
p
R
1.E+01
RMS
150
100
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