GNM214R71C104MA03D Murata Electronics North America, GNM214R71C104MA03D Datasheet - Page 99
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GNM214R71C104MA03D
Manufacturer Part Number
GNM214R71C104MA03D
Description
CAP 4-ARRAY 0.1UF 16V X7R SMD
Manufacturer
Murata Electronics North America
Datasheet
1.GNM1M2R71C104MA03D.pdf
(220 pages)
Specifications of GNM214R71C104MA03D
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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!Note
• This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our
• This PDF catalog has only typical specifications because there is no space for detailed specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
sales representatives or product engineers before ordering.
!Note
Table A
(1)
*1: Nominal values denote the temperature coefficient within a range of 25 to 125D.
(2)
*2: Nominal values denote the temperature coefficient within a range of 20 to 125D.
No.
17
18
19
GJM Series Specifications and Test Methods (1)
Char. Code
Continued from the preceding page.
Humidity
Load
High
Temperature
Load
ESR
Char.
• Please read rating and !CAUTION (for storage, operating, rating, soldering, mounting and handling) in this catalog to prevent smoking and/or burning, etc.
• This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
5C
6C
2C
3C
4C
Item
Appearance
Capacitance
Change
Q
I.R.
Appearance
Capacitance
Change
Q
I.R.
Nominal Values
The measured and observed characteristics should satisfy the
specifications in the following table.
No marking defects
Within T7.5% or T0.75pF
(Whichever is larger)
30pF and over: QU200
30pF and below: QU100W
C: Nominal Capacitance (pF)
More than 500MΩ or 25Ω · F (Whichever is smaller)
The measured and observed characteristics should satisfy the
specifications in the following table.
No marking defects
Within T3% or T0.3pF
(Whichever is larger)
30pF and over:
10pF and over, 30pF and below: QU275W
10pF and below:
C: Nominal Capacitance (pF)
More than 1,000MΩ or 50Ω · F (Whichever is smaller)
0.1pFVCV1pF: 350mΩ · pF below
1pFFCV5pF: 300mΩ below
5pFFCV10pF: 250mΩ below
10pFFCV33pF: 400mΩ below
Temp. Coeff.
(ppm/D) * 1
(ppm/D) * 2
0T120
0T250
0T30
0T60
0T60
Temperature Compensating Type
Specifications
10
3
C
Max.
Max.
0.58
0.87
0.82
1.37
2.56
QU350
QU200W10C
Y55D
Y55D
5
2
GJM Series Specifications and Test Methods
C
Y0.24
Y0.48
Y0.45
Y0.90
Y1.88
Min.
Min.
Capacitance Change from 25D Value (%)
Capacitance Change from 20D Value (%)
Apply the rated voltage at 40T2D and 90 to 95% humidity for
500T12 hours.
Remove and let sit for 24T2 hours at room temperature, then
measure. The charge/discharge current is less than 50mA.
Apply 200% of the rated voltage for 1000T12 hours at the
maximum operating temperature T3D. Let sit for 24T2 hours
(temperature compensating type) at room temperature, then
measure.
The charge/discharge current is less than 50mA.
The ESR should be measured at room temperature, and
frequency 1T0.2GHz with the equivalent of BOONTON Model
34A.
The ESR should be measured at room temperature, and
frequency 500T50MHz with the equivalent of HP8753B.
Max.
Max.
0.40
0.60
0.49
0.82
1.54
Y30D
Y25D
Y0.17
Y0.33
Y0.27
Y0.54
Y1.13
Min.
Min.
Test Method
Max.
Max.
0.25
0.38
0.33
0.55
1.02
Y10D
Y10D
Y0.11
Y0.21
Y0.18
Y0.36
Y0.75
Min.
Min.
C02E.pdf
97
09.9.18
4
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