DG419DY-T1-E3 Vishay, DG419DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: DG419DY-T1-E3
• Description: Analog Switch ICs Single SPDT 22/25V
• Manufacturer: Vishay
• Type: Analog Switchr

Specifications of DG419DY-T1-E3

• Number Of Switches: Single
• Switch Configuration: SPDT
• On Resistance (max): 40 Ohms (Typ) @ 10.8 V
• On Time (max): 110 ns (Typ) @ 12 V
• Off Time (max): 40 ns (Typ) @ 12 V
• Supply Voltage (max): 25 V
• Supply Current: 0.000001 mA
• Maximum Power Dissipation: 400 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 40 C
• Propagation Delay Time: 175 ns
• Analog Switch Type: SPDT
• No. Of Channels: 1
• On State Resistance Max: 20ohm
• Turn Off Time: 40ns
• Turn On Time: 110ns
• Supply Voltage Range: ± 15V
• Operating Temperature Range: -40°C To +85°C
• Multiplexer Configuration: Single SPDT
• Number Of Inputs: 1
• Number Of Outputs: 2
• Number Of Channels: 1
• Analog Switch On Resistance: 45@±13.5VOhm
• Package Type: SOIC N
• Power Supply Requirement: Single/Dual
• Single Supply Voltage (min): 13V
• Single Supply Voltage (typ): 15/18/24/28V
• Single Supply Voltage (max): 36V
• Dual Supply Voltage (min): ±7V
• Dual Supply Voltage (typ): ±9/±12/±15/±18V
• Dual Supply Voltage (max): ±22V
• Power Dissipation: 400mW
• Mounting: Surface Mount
• Pin Count: 8
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

DG417, DG418, DG419
Vishay Siliconix
Notes:
a. Signals on S
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 6.5 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
www.vishay.com
2
ORDERING INFORMATION
DG417, DG418
DG419
ABSOLUTE MAXIMUM RATINGS
Parameter (Voltages referenced to V-)
V+
GND
V
Digital Inputs
Current , (Any Terminal) Continuous
Current, S or D (Pulsed at 1 ms, 10 % Duty Cycle)
Storage Temperature
Power Dissipation (Package)
L
- 40 °C to 85 °C
- 40 °C to 85 °C
Temp. Range
X
a
, V
, D
S
X
, V
, or IN
D
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b
(AK Suffix)
(DJ, DY Suffix)
8-Pin Plastic MiniDIP
8-Pin CerDIP
8-Pin Narrow SOIC
8-Pin Plastic MiniDIP
8-Pin Plastic MiniDIP
8-Pin Narrow SOIC
8-Pin Narrow SOIC
Package
e
d
c
or 30 mA, whichever occurs first
(GND - 0.3) to (V+) + 0.3
(V-) - 2 to (V+) + 2
- 65 to 150
- 65 to 125
DG417DY-T1-E3
DG418DY-T1-E3
DG419DY-T1-E3
Part Number
DG417DJ-E3
DG418DJ-E3
DG417DY-E3
DG418DY-E3
DG419DJ-E3
DG419DY-E3
DG417DY-T1
DG418DY-T1
DG419DY-T1
Limit
100
400
400
600
DG417DJ
DG418DJ
DG417DY
DG418DY
DG419DJ
DG419DY
44
25
30
S10-1528-Rev. G, 19-Jul-10
Document Number: 70051
Unit
mW
mA
°C
V