S29GL256P11TFI010 Spansion Inc., S29GL256P11TFI010 Datasheet - Page 62

Flash 3V 256Mb Mirrorbit highest address110ns

S29GL256P11TFI010

Manufacturer Part Number
S29GL256P11TFI010
Description
Flash 3V 256Mb Mirrorbit highest address110ns
Manufacturer
Spansion Inc.

Specifications of S29GL256P11TFI010

Memory Type
NOR
Memory Size
256 Mbit
Access Time
110 ns
Data Bus Width
8 bit, 16 bit
Architecture
Uniform
Interface Type
Page-mode
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
50 mA
Mounting Style
SMD/SMT
Operating Temperature
+ 85 C
Package / Case
TSOP-56
Memory Configuration
128K X 16
Ic Interface Type
Parallel
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
56
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S29GL256P11TFI010
Quantity:
5 530
Part Number:
S29GL256P11TFI010
Manufacturer:
SPANSION
Quantity:
5 530
Part Number:
S29GL256P11TFI010
Manufacturer:
SPANSION
Quantity:
72
Notes
1. Typical program and erase times assume the following conditions: 25°C, 3.6 V V
2. Under worst case conditions of -40°C, V
3. Effective write buffer specification is based upon a 32-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words program faster than the maximum
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables 12.1–12.4.
Notes
1. Sampled, not 100% tested.
2. Test conditions T
60
Sector Erase Time
Chip Erase Time
Total Write Buffer Time
Total Accelerated Write Buffer Programming Time
(Note 3)
Chip Program Time
11.7.5
program times listed.
11.7.6
Parameter Symbol
C
C
C
OUT
IN2
IN
A
Erase And Programming Performance
TSOP Pin and BGA Package Capacitance
= 25°C, f = 1.0 MHz.
(Note 4)
Parameter
(Note 3)
Control Pin Capacitance
Parameter Description
Output Capacitance
Input Capacitance
CC
S29GL01GP
S29GL01GP
S29GL128P
S29GL256P
S29GL512P
S29GL128P
S29GL256P
S29GL512P
= 3.0 V, 100,000 cycles.
Table 11.8 Erase And Programming Performance
D a t a
S29GL-P MirrorBit
S h e e t
(Note 1)
Table 1:
Typ
128
256
512
480
432
123
246
492
984
0.5
64
( A d v a n c e
V
TM
CC
V
V
OUT
IN
IN
Flash Family
, 10,000 cycles, checkerboard pattern.
= 0
= 0
= 0
Test Setup
(Note 2)
1024
2048
Max
256
512
3.5
I n f o r m a t i o n )
TSOP
TSOP
TSOP
BGA
BGA
BGA
Unit
sec
sec
sec
µs
µs
Excludes 00h programming
prior to erasure
Excludes system level
overhead
Typ
S29GL-P_00_A3 November 21, 2006
4.2
8.5
5.4
7.5
3.9
6
Comments
(Note 6)
Max
7.5
5.0
6.5
4.7
12
9
(Note 5)
Unit
pF
pF
pF
pF
pF
pF

Related parts for S29GL256P11TFI010