SSM3K7002FT5LFT Toshiba, SSM3K7002FT5LFT Datasheet - Page 4

• Manufacturer Part Number: SSM3K7002FT5LFT
• Description: MOSFET Small Signal Field-Effect Trans Silicon N-Ch MOS
• Manufacturer: Toshiba

Specifications of SSM3K7002FT5LFT

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Package / Case: SMini
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
250
200
150
100
100
10
50
10
0
1
10
0.1
0
Common source
VDS = 10 V
Ta = 25 °C
20
40
Ambient Temperature Ta (°C)
Drain-Source Voltage V
Drain Current I
1
60
|Yfs| - I
C - V
P
D
- Ta
100
80
DS
D
D
100
(mA)
10
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25 °C
DS
(V)
120
140
Coss
Crss
Ciss
1000
100
160
4
10000
1000
1000
900
800
700
600
500
400
300
200
100
100
10
1
0
1
0
td(on)
td(off)
Common Source
VGS = 0 V
Ta = 25 °C
G
-0.2
tf
S
D
tr
Drain-Source Voltage V
-0.4
IDR
Drain Current I
10
I
DR
-0.6
t - ID
- V
DS
-0.8
D
(mA)
Common Source
VDD = 30 V
VGS = 0 to 10 V
Ta = 25 °C
100
DS
-1
SSM3K7002F
(V)
-1.2
2005-11-03
1000
-1.4