SSM3K7002FT5LFT Toshiba, SSM3K7002FT5LFT Datasheet - Page 2

• Manufacturer Part Number: SSM3K7002FT5LFT
• Description: MOSFET Small Signal Field-Effect Trans Silicon N-Ch MOS
• Manufacturer: Toshiba

Specifications of SSM3K7002FT5LFT

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Package / Case: SMini
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Time Test Circuit
Marking
Precaution
for this product. For normal switching operation, V
lower voltage than V
Handling Precaution
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
V
(The relationship can be established as follows: V
Take this into consideration when using the device.
The recommended V
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
th
(a) Test circuit
can be expressed as the voltage between gate and source when the low operating current value is I
1
10 V
V
Duty < = 1%
V
(Z
Common Source
Ta = 25 °C
NC
0
DD
IN
out
: t
3
10 µs
= 30 V
r
= 50 Ω)
, t
th.
f
< 2 ns
GS
IN
2
voltage for turning on this product is 4.5 V or higher.
R
V
OUT
L
DD
Equivalent Circuit
GS (on)
GS (off)
(b) V
(c) V
1
requires a higher voltage than V
< V
2
OUT
IN
th
< V
3
V
GS (on).
DS (ON)
V
10 V
DD
0 V
td
2
)
(top view)
(on)
10 %
t
r
10 %
90 %
th,
and V
90 %
GS (off)
SSM3K7002F
td
(off)
t
f
D
2005-11-03
requires a
= 0.25 mA