TN0106N3-G Supertex, TN0106N3-G Datasheet - Page 4

• Manufacturer Part Number: TN0106N3-G
• Description: MOSFET Small Signal 60V 3Ohm
• Manufacturer: Supertex
• Type: Power MOSFETr

Specifications of TN0106N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
100
1.3
1.2
1.1
1.0
0.9
0.8
3.0
2.4
1.8
1.2
0.6
75
50
25
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
2
Transfer Characteristics
= 25V
10
0
Variation with Temperature
V
V
GS
4
DS
T
(volts)
j
50
20
(
(volts)
O
C)
●
T
6
A
1235 Bordeaux Drive, Sunnyvale, CA 94089
= -55
100
30
O
C
150
f = 1MHz
8
(cont.)
25
C
C
C
OSS
RSS
O
ISS
O
C
C
150
10
40
4
5.0
4.0
2.0
1.4
1.2
1.0
0.8
0.6
0.4
3.0
1.0
10
8
6
4
2
0
0
-50
0
0
V
●
(th)
Gate Drive Dynamic Characteristics
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On-Resistance vs. Drain Current
and R
V
DS
1.0
1.0
V
= 10V
0
50pF
(th)
DS
Q (nanocoulombs)
V
G
@ 0.5mA
I
GS
D
Variation with Temperature
2.0
2.0
(amperes)
= 5V
T
j
50
(
55pF
R
O
C)
DS(ON)
●
3.0
3.0
www.supertex.com
V
@ 10V, 0.5A
100
GS
40V
4.0
4.0
= 10V
150
5.0
5.0
1.4
1.2
1.0
0.8
0.6
0.4
TN0106