SI2301BDS-T1-GE3 Vishay, SI2301BDS-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI2301BDS-T1-GE3
• Description: MOSFET Small Signal 20V 2.4A 0.9W 100mohm @ 4.5V
• Manufacturer: Vishay

Specifications of SI2301BDS-T1-GE3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.1 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-236
• Continuous Drain Current Id: -2.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -950mV
• Power Dissipation Pd: 700mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72066
S-80427-Rev. D, 03-Mar-08
10
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
5
4
3
2
1
0
0
0
0
V
I
D
DS
On-Resistance vs. Drain Current
= 2.8 A
= 10 V
1
V
2
1
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
I
- Total Gate Charge (nC)
D
V
Gate Charge
- Drain Current (A)
GS
2
4
2
= 5 thru 2.5 V
V
GS
= 2.5 V
3
6
3
V
GS
1.5 V
= 4.5 V
4
8
4
2 V
1 V
10
5
5
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
0.5
= 2.8 A
V
= 4.5 V
4
DS
V
Transfer Characteristics
T
GS
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
1.0
oss
25
Capacitance
8
T
C
1.5
50
C
Vishay Siliconix
iss
25 °C
= - 55 °C
Si2301BDS
12
75
2.0
www.vishay.com
100
16
2.5
125 °C
125
150
3.0
20
3