SI7460DP-T1-E3 Vishay, SI7460DP-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI7460DP-T1-E3
• Description: MOSFET Small Signal 60V 18A 5.4W 9.6mohm @ 10V
• Manufacturer: Vishay

Specifications of SI7460DP-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0096 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 9.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72126.
Document Number: 72126
S09-0227-Rev. D, 09-Feb-09
0.01
0.1
2
1
10
- 4
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
10
- 3
Square Wave Pulse Duration (s)
10
- 2
10
- 1
Vishay Siliconix
Si7460DP
www.vishay.com
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