SI7460DP-T1-E3 Vishay, SI7460DP-T1-E3 Datasheet

MOSFET Small Signal 60V 18A 5.4W 9.6mohm @ 10V

SI7460DP-T1-E3

Manufacturer Part Number
SI7460DP-T1-E3
Description
MOSFET Small Signal 60V 18A 5.4W 9.6mohm @ 10V
Manufacturer
Vishay
Datasheet

Specifications of SI7460DP-T1-E3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0096 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
60 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO
Continuous Drain Current Id
11A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
9.6mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7460DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72126
S09-0227-Rev. D, 09-Feb-09
Ordering Information: Si7460DP-T1-E3 (Lead (Pb)-free)
THERMAL RESISTANCE RATINGS
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
60
8
(V)
6.15 mm
D
7
D
6
D
PowerP AK SO-8
Bottom V iew
5
N-Channel 60-V (D-S) Fast Switching MOSFET
Si7460DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.0096 at V
0.012 at V
D
R
DS(on)
1
J
a
S
= 150 °C)
GS
a
GS
2
(Ω)
= 4.5 V
S
= 10 V
3
S
a
5.15 mm
4
G
a
b,c
A
= 25 °C, unless otherwise noted
I
D
Steady State
18
16
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
Symbol
Symbol
T
R
R
Available
New Low Thermal Resistance PowerPAK
Package with Low 1.07 mm Profile
J
V
V
E
I
I
P
, T
DM
thJC
I
I
AS
thJA
GS
DS
AS
D
S
D
stg
®
Power MOSFETs
G
Typical
N-Channel MOSFET
10 s
4.3
5.4
3.4
1.0
18
14
18
52
- 55 to 150
D
S
± 20
125
260
60
40
50
Steady State
Maximum
1.6
1.9
1.2
1.3
11
23
65
Vishay Siliconix
8
Si7460DP
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI7460DP-T1-E3 Summary of contents

Page 1

... S 6. Bottom V iew Ordering Information: Si7460DP-T1-E3 (Lead (Pb)-free) Si7460DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si7460DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72126 S09-0227-Rev. D, 09-Feb- 4 0.020 0.016 0.012 0.008 °C J 0.004 0.000 0.8 1.0 1.2 Si7460DP Vishay Siliconix 5000 4000 C iss 3000 2000 1000 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 1 1.4 1 ...

Page 4

... Si7460DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 = 250 μ 0.4 0.0 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on D(on) Limited ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72126. Document Number: 72126 S09-0227-Rev. D, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7460DP Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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