ZXMHC10A07T8TA Diodes Inc, ZXMHC10A07T8TA Datasheet - Page 5
![MOSFET Small Signal 100V 1.4A N-Channel MOSFET H-Bridge](/photos/16/8/160873/soic-8_sml.jpg)
ZXMHC10A07T8TA
Manufacturer Part Number
ZXMHC10A07T8TA
Description
MOSFET Small Signal 100V 1.4A N-Channel MOSFET H-Bridge
Manufacturer
Diodes Inc
Datasheet
1.ZXMHC10A07T8TA.pdf
(10 pages)
Specifications of ZXMHC10A07T8TA
Minimum Operating Temperature
- 55 C
Configuration
Quad Dual Drain Dual Source
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.7 Ohm @ N Channel @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.1 A @ N Channel or 0.9 A @ P Channel
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SM8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ISSUE 2 - JUNE 2005
P-Channel
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1) (3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
300 s; duty cycle
5
MIN.
-100
-2.0
-0.85
TYP.
141
13.1
10.8
1.2
3.3
1.6
2.1
5.9
1.6
3.5
0.6
1.6
29
31
2%.
MAX. UNIT CONDITIONS
-0.95
-1.0
-4.0
100
1.45
1
ZXMHC10A07T8
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
= -250 A, V
= -250 A, V
= -0.6A
= -0.6A
=25°C, I
=25°C, I
S E M I C O N D U C T O R S
= -100V, V
= -15V, I
= -50V, V
= -50V, V
= -50V, V
=±20V, V
= -10V, I
= -6V, I
= -50V, I
=0V
6.0 , V
S
S
= -0.75A,
= -0.9A,
D
D
D
D
= -0.5A
GS
DS
GS
GS
GS
= -0.6A
= - 0.6A
= -1A
GS
DS
GS
= -10V
=0V
=0V
= -5V
= -10V
=V
=0V
=0V
GS