ZXMHC10A07T8TA Diodes Inc, ZXMHC10A07T8TA Datasheet - Page 4
![MOSFET Small Signal 100V 1.4A N-Channel MOSFET H-Bridge](/photos/16/8/160873/soic-8_sml.jpg)
ZXMHC10A07T8TA
Manufacturer Part Number
ZXMHC10A07T8TA
Description
MOSFET Small Signal 100V 1.4A N-Channel MOSFET H-Bridge
Manufacturer
Diodes Inc
Datasheet
1.ZXMHC10A07T8TA.pdf
(10 pages)
Specifications of ZXMHC10A07T8TA
Minimum Operating Temperature
- 55 C
Configuration
Quad Dual Drain Dual Source
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.7 Ohm @ N Channel @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.1 A @ N Channel or 0.9 A @ P Channel
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SM8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
N-Channel
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMHC10A07T8
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1) (3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated)
300 s; duty cycle
4
MIN.
100
2.0
TYP.
138
1.6
1.8
1.5
4.1
2.1
2.9
0.7
1.0
12
27
12
6
2%.
MAX. UNIT CONDITIONS
0.95
100
4.0
0.7
0.9
1
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt=100A/ s
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
= 250 A, V
= 250 A, V
= 1.0A
=25°C, I
=25°C, I
=100V, V
= 15V, I
= 60V, V
= 50V, V
=±20V, V
= 10V, I
= 6V, I
= 50V, I
=0V
ISSUE 2 - JUNE 2005
6.0 , V
S
S
D
= 1.5A,
= 1.8A,
D
D
= 1.0A
D
GS
GS
GS
= 1.0A
GS
= 1.5A
= 1.0A
GS
DS
DS
=0V
= 10V
= 10V
=0V
=0V
=V
=0V
GS