BSC020N03LS G Infineon Technologies, BSC020N03LS G Datasheet - Page 10
![MOSFET Power N-CH 30 V 100 A](/photos/16/8/160875/tson8_sml.jpg)
BSC020N03LS G
Manufacturer Part Number
BSC020N03LS G
Description
MOSFET Power N-CH 30 V 100 A
Manufacturer
Infineon Technologies
Datasheet
1.BSC020N03LS_G.pdf
(10 pages)
Specifications of BSC020N03LS G
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.002 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
130 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
28 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TDSON
Fall Time
7 ns
Rise Time
7 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSC020N03LSGXT