IPD090N03L G Infineon Technologies, IPD090N03L G Datasheet - Page 11

no-image

IPD090N03L G

Manufacturer Part Number
IPD090N03L G
Description
MOSFET Power N-CH 30V 30A
Manufacturer
Infineon Technologies
Datasheet

Specifications of IPD090N03L G

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
40 A
Power Dissipation
42000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.5mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-252
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD090N03LGXT
IPD090N03L G
IPF090N03L G
IPS090N03L G
IPU090N03L G
Package Outline
PG-TO251-3
PG-TO251-3-11: Outline
PG-TO251-3-21: Outline
Rev. 1.06
page 11
2008-04-15

Related parts for IPD090N03L G