IPD075N03L G Infineon Technologies, IPD075N03L G Datasheet - Page 9

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IPD075N03L G

Manufacturer Part Number
IPD075N03L G
Description
MOSFET Power N-CH 30V 30A
Manufacturer
Infineon Technologies
Datasheet

Specifications of IPD075N03L G

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
47000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Drain Source Voltage Vds
30V
On Resistance Rds(on)
6.3mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-252
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD075N03LGXT
IPD075N03L G
IPF075N03L G
IPS075N03L G
IPU075N03L G
Package Outline
PG-TO252-3-23
PG-TO252-3-23: Outline
Footprint:
Rev. 1.1
page 9
2009-01-14

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