IPD50N06S3-07 Infineon Technologies

MOSFET Power OPTIMOS-T N-CH 55V 50A 6.9mOhms

IPD50N06S3-07

Manufacturer Part Number

IPD50N06S3-07

Description

MOSFET Power OPTIMOS-T N-CH 55V 50A 6.9mOhms

Manufacturer

Infineon Technologies

Specifications of IPD50N06S3-07

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

6.9 m Ohms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

2.1 V

Continuous Drain Current

50 A

Power Dissipation

136 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

PG-TO-252-3-11

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IPD50N06S307XT

Related parts for IPD50N06S3-07

Related keywords

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