SUD35N05-26L-E3 Vishay, SUD35N05-26L-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD35N05-26L-E3
• Description: MOSFET Power 55V 35A 50W
• Manufacturer: Vishay

Specifications of SUD35N05-26L-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.02 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 35A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 26mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Power Dissipation Pd: 7.5W
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SUD35N05-26L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
www.vishay.com
4
http://www.vishay.com/ppg?71443.
0.01
2.0
1.6
1.2
0.8
0.4
0.0
40
30
20
10
0.1
0
- 50
2
1
0
10
On-Resistance vs. Junction Temperature
Maximum Avalanche and Drain Current
- 4
V
I
- 25
Duty Cycle = 0.5
0.2
0.1
D
GS
25
= 20 A
= 10 V
Single Pulse
T
0
J
T
0.05
50
C
vs. Case Temperature
- Junction Temperature (°C)
- Case Temperature (°C)
0.02
25
75
50
10
- 3
100
75
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
150
150
10
New Product
- 2
175
175
Square Wave Pulse Duration (sec)
10
500
100
0.1
- 1
10
100
1
10
1
0.1
0
by r
Limited
Source-Drain Diode Forward Voltage
DS(on)
0.2
V
V
DS
SD
Single Pulse
Safe Operating Area
T
- Drain-to-Source Voltage (V)
- Source-to-Drain Voltage (V)
C
T
0.4
1
J
= 25 °C
1
= 175 °C
0.6
S-71661-Rev. B, 06-Aug-07
Document Number: 71443
10
0.8
T
J
10
= 25 °C
1.0
10 µs
100 µs
10 ms
100 ms
1 s
dc
100
1.2
30