SUD35N05-26L-E3 Vishay, SUD35N05-26L-E3 Datasheet
SUD35N05-26L-E3
Specifications of SUD35N05-26L-E3
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SUD35N05-26L-E3 Summary of contents
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... 0.026 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD35N05-26L SUD35N05-26L (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... SUD35N05-26L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... C oss C rss Drain-to-Source Voltage (V) DS Capacitance Document Number: 71443 S-71661-Rev. B, 06-Aug-07 New Product ° °C 125 ° 100 C iss SUD35N05-26L Vishay Siliconix 100 ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0. 0.02 0.01 0. Drain Current (A) D On-Resistance vs ...
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... SUD35N05-26L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2 1.6 1.2 0.8 0.4 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS 100 T - Case Temperature (°C) C Maximum Avalanche and Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...