SUD35N05-26L-E3 Vishay, SUD35N05-26L-E3 Datasheet

MOSFET Power 55V 35A 50W

SUD35N05-26L-E3

Manufacturer Part Number
SUD35N05-26L-E3
Description
MOSFET Power 55V 35A 50W
Manufacturer
Vishay
Datasheet

Specifications of SUD35N05-26L-E3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.02 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
35 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Continuous Drain Current Id
35A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
26mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1V
Power Dissipation Pd
7.5W
Transistor Case Style
D-PAK
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD35N05-26L-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Package limited.
b. Surface Mounted on 1" x1" FR4 Board, t ≤ 10 sec.
c. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71443
S-71661-Rev. B, 06-Aug-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Junction-to-Lead
V
DS
55
(V)
Ordering Information: SUD35N05-26L
b
G
0.026 at V
Top View
0.020 at V
TO-252
D
r
DS(on)
J
N-Channel 55 V (D-S) 175 °C MOSFET
S
= 175 °C)
GS
GS
(Ω)
= 4.5 V
SUD35N05-26L (Lead (Pb)-free)
= 10 V
Drain Connected to Tab
b
a
A
I
= 25 °C, unless otherwise noted
D
35
30
(A)
New Product
a
Steady State
T
T
T
T
t ≤ 10 sec
C
C
C
A
= 100 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
• 175 °C Rated Maximum Junction Temperature
• Low Input Capacitance
G
N-Channel MOSFET
Symbol
Symbol
T
R
R
R
J
V
V
I
D
S
P
, T
I
DM
thJA
thJC
I
thJL
DS
GS
D
S
D
®
stg
Power MOSFETS
Typical
2.5
5.0
17
50
- 55 to 175
Limit
SUD35N05-26L
± 20
7.5
50
55
35
25
80
35
c
b
Maximum
Vishay Siliconix
3.0
6.0
20
60
www.vishay.com
°C/W
RoHS*
Unit
COMPLIANT
Unit
°C
W
V
A
Available
1

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SUD35N05-26L-E3 Summary of contents

Page 1

... 0.026 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD35N05-26L SUD35N05-26L (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUD35N05-26L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... C oss C rss Drain-to-Source Voltage (V) DS Capacitance Document Number: 71443 S-71661-Rev. B, 06-Aug-07 New Product ° °C 125 ° 100 C iss SUD35N05-26L Vishay Siliconix 100 ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0. 0.02 0.01 0. Drain Current (A) D On-Resistance vs ...

Page 4

... SUD35N05-26L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2 1.6 1.2 0.8 0.4 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS 100 T - Case Temperature (°C) C Maximum Avalanche and Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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