IRF9630SPBF Vishay, IRF9630SPBF Datasheet - Page 2

• Manufacturer Part Number: IRF9630SPBF
• Description: MOSFET Power P-Chan 200V 6.5 Amp
• Manufacturer: Vishay

Specifications of IRF9630SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.7 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Continuous Drain Current Id: -6.5A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9630S, SiHF9630S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
I
I
C
R
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
L
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
T
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
GS
GS
V
= 25 °C, I
DS
T
R
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= - 10 V
= - 10 V
g
= 25 °C, I
= - 160 V, V
= 12 , R
V
V
V
V
V
DD
DS
f = 1.0 MHz, see fig. 5
DS
DS
TYP.
GS
TEST CONDITIONS
= - 100 V, I
-
-
-
= - 50 V, I
F
= V
= - 200 V, V
= 0 V, I
= - 6.5 A, dI/dt = 100 A/μs
V
V
V
GS
DS
I
S
GS
D
D
GS
= - 6.5 A, V
= - 6.5 A, V
GS
= 15 , see fig. 10
, I
= - 25 V,
= ± 20 V
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
= - 250 μA
D
= - 250 μA
I
D
D
= - 3.9 A
GS
= - 6.5 A,
= - 3.9 A
D
= - 1 mA
= 0 V
GS
J
DS
G
G
= 125 °C
= 0 V
= - 160 V,
b
b
MAX.
D
S
b
b
b
D
S
1.7
62
40
b
- 200
MIN.
- 2.0
2.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2554-Rev. B, 08-Nov-10
Document Number: 91085
- 0.24
TYP.
700
200
200
4.5
7.5
1.9
40
12
27
28
24
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
0.80
- 6.5
- 6.5
- 26
300
5.4
2.9
S
29
15
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V