IRF9630SPBF Vishay, IRF9630SPBF Datasheet
IRF9630SPBF
Specifications of IRF9630SPBF
Related parts for IRF9630SPBF
IRF9630SPBF Summary of contents
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... Q (nC) gd Configuration 2 D PAK (TO-263 ORDERING INFORMATION Package D Lead (Pb)-free and Halogen-free SiHF9630S-GE3 IRF9630SPbF Lead (Pb)-free SiHF9630S-E3 IRF9630S SnPb SiHF9630S Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor ...
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... IRF9630S, SiHF9630S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Document Number: 91085 S10-2554-Rev. B, 08-Nov- µs Pulse Width ° 91085_03 = 25 ° 4 µs Pulse Width T = 150 ° 91085_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRF9630S, SiHF9630S Vishay Siliconix 1 10 ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF9630S, SiHF9630S Vishay Siliconix 1200 MHz iss gs 1000 rss oss ds 800 600 400 200 Drain-to-Source Voltage ( 91085_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 6 100 Total Gate Charge (nC) 91085_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91085_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91085 S10-2554-Rev. B, 08-Nov-10 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF9630S, SiHF9630S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF9630S, SiHF9630S Vishay Siliconix Vary t to obtain p required D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91085_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 1200 Top 1000 ...
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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91085. Document Number: 91085 S10-2554-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...