SUD40N10-25-E3 Vishay, SUD40N10-25-E3 Datasheet

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... GS 100 0.028 4 O-252 Drain Connected Ordering Information: SUD40N10-25 SUD40N10-25-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy (Duty Cycle ≤ ...

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... SUD40N10-25 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

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... C oss Drain-to-Source Voltage (V) DS Capacitance Document Number: 71140 S-81732-Rev. E, 04-Aug- 0.05 0.04 25 °C 0.03 125 °C 0.02 0.01 0. iss 60 80 100 SUD40N10-25 Vishay Siliconix 100 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs. Drain Current 20 V ...

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... SUD40N10-25 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3 2.5 2.0 1.5 1.0 0.5 0 Junction Temperature ( J On-Resistance vs. Junction Temperature THERMAL RATINGS 100 T - Case Temperature (°C) C Maximum Avalanche Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse ...

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