SI4559EY-T1-E3 Vishay, SI4559EY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4559EY-T1-E3
• Description: MOSFET Power 60V 4.5/3.1A
• Manufacturer: Vishay

Specifications of SI4559EY-T1-E3

• Transistor Polarity: N and P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.055 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A @ N Channel or 3.1 A @ P Channel
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 55mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si4559EY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.0
0.4
0.2
20
10
1
0.01
- 50 - 25
0
0.1
2
1
10
-4
Source-Drain Diode Forward Voltage
0.2
T
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
J
= 175 °C
V
0
SD
0.4
Single Pulse
- Source-to-Drain Voltage (V)
Threshold Voltage
T
25
J
- Temperature (°C)
0.6
50
I
10
D
75
0.8
= 250 µA
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
T
J
1.0
= 25 °C
125
1.2
150
Square Wave Pulse Duration (s)
10
175
-2
1.4
10
-1
0.10
0.08
0.06
0.04
0.02
50
40
30
20
10
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
2
V
GS
0.1
- Gate-to-Source Voltage (V)
Single Pulse Power
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
I
D
JM
4
= 4.5 A
- T
Time (s)
t
A
1
S09-1389-Rev. E, 20-Jul-09
= P
t
Document Number: 70167
2
DM
1
Z
6
thJA
thJA
t
t
1
2
(t)
= 62.5 °C/W
10
8
10
30
10
30