SI4559EY-T1-E3 Vishay, SI4559EY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4559EY-T1-E3
• Description: MOSFET Power 60V 4.5/3.1A
• Manufacturer: Vishay

Specifications of SI4559EY-T1-E3

• Transistor Polarity: N and P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.055 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A @ N Channel or 3.1 A @ P Channel
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 55mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
0.150
0.125
0.100
0.075
0.050
0.025
10
30
24
18
12
0
8
6
4
2
0
6
0
0
0
0
I
D
= 4.5 A
On-Resistance vs. Drain Current
6
4
1
V
DS
Q
Output Characteristics
V
g
GS
-
-
Drain-to-Source Voltage (V )
I
Total Gate Charge (nC)
D
= 4.5 V
Gate Charge
- Drain Current (A)
12
8
2
V
2 V, 1 V
V
GS
DS
= 10 V thru 5 V
= 30 V
18
12
3
V
GS
16
24
4
= 10 V
4 V
3 V
30
20
5
1400
1200
1000
800
600
400
200
2.2
1.9
1.6
1.3
1.0
0.7
0.4
30
24
18
12
6
0
0
- 50
0
0
I
On-Resistance vs. Junction Temperature
C
C
D
- 25
oss
C
iss
= 4.5 V
rss
1
12
V
V
0
Transfer Characteristics
T
DS
GS
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
2
Capacitance
24
50
Vishay Siliconix
T
3
C
25 °C
V
75
= - 55 °C
GS
36
= 10 V
Si4559EY
100
4
www.vishay.com
125
150 °C
48
5
150
175
60
6
3