IRF9Z24SPBF Vishay, IRF9Z24SPBF Datasheet - Page 7
IRF9Z24SPBF
Manufacturer Part Number
IRF9Z24SPBF
Description
MOSFET Power P-Chan 60V 11 Amp
Manufacturer
Vishay
Specifications of IRF9Z24SPBF
Transistor Polarity
P-Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
-10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Voltage Vgs Max
20V
Transistor Case Style
D2-PAK
Threshold Voltage Vgs Typ
-4V
Rohs Compliant
Yes
Fall Time
29 ns
Rise Time
68 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
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Part Number
Manufacturer
Quantity
Price
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Re-Applied
Voltage
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
GS
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
Diode Recovery
SD
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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