SI4840BDY-T1-E3 Vishay, SI4840BDY-T1-E3 Datasheet

MOSFET Power 40V 19A 6.0W 9.0mohm @ 10V

SI4840BDY-T1-E3

Manufacturer Part Number
SI4840BDY-T1-E3
Description
MOSFET Power 40V 19A 6.0W 9.0mohm @ 10V
Manufacturer
Vishay
Datasheet

Specifications of SI4840BDY-T1-E3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.009 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12.4 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Continuous Drain Current Id
19A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
9mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4840BDY-T1-E3
Manufacturer:
TI
Quantity:
4 492
Part Number:
SI4840BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
5 000
Part Number:
SI4840BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
760
Part Number:
SI4840BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on T
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
Ordering Information: Si4840BDY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
40
(V)
S
S
S
G
C
= 25 °C.
1
2
3
4
0.012 at V
0.009 at V
Si4840BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
Top View
DS(on)
SO-8
GS
GS
J
(Ω)
= 4.5 V
= 10 V
= 150 °C)
a, c
8
7
6
5
N-Channel 40-V (D-S) MOSFET
D
D
D
D
I
D
19
16
(A)
Steady State
d
t ≤ 10 s
T
T
T
T
L = 0.1 mH
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
15 nC
(Typ.)
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS directive 2002/95/EC
• Synchronous Rectification
• POL, IBC
Definition
- Secondary Side
Typical
37
17
g
Tested
®
Power MOSFET
- 55 to 150
12.4
9.9
2.1
2.5
1.6
Limit
± 20
3.8
40
19
15
50
15
11
5
6
G
a, b
a, b
a, b
a, b
a, b
N-Channel MOSFET
Maximum
50
21
Vishay Siliconix
D
S
Si4840BDY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI4840BDY-T1-E3 Summary of contents

Page 1

... SO Top View Ordering Information: Si4840BDY-T1-E3 (Lead (Pb)-free) Si4840BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4840BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage 12 Total Gate Charge (nC) g Gate Charge Document Number: 69795 S09-0532-Rev. C, 06-Apr- 1.2 1.6 2 Si4840BDY Vishay Siliconix ° 125 ° 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 2400 C iss 2000 1600 1200 800 C oss 400 C rss ...

Page 4

... Si4840BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2 250 µA D 2.2 2.0 1.8 1.6 1.4 1.2 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.030 0.025 0.020 0.015 0.010 °C J 0.005 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69795 S09-0532-Rev. C, 06-Apr-09 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4840BDY Vishay Siliconix ...

Page 6

... Si4840BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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