ZXMP10A13FTA Diodes Inc, ZXMP10A13FTA Datasheet - Page 4
ZXMP10A13FTA
Manufacturer Part Number
ZXMP10A13FTA
Description
MOSFET Power P-Ch 100 Volt 0.7A
Manufacturer
Diodes Inc
Datasheet
1.ZXMP10A13FTA.pdf
(7 pages)
Specifications of ZXMP10A13FTA
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.7 A
Power Dissipation
806 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZXMP10A13FTA
Manufacturer:
ZETEX
Quantity:
3 000
Part Number:
ZXMP10A13FTA
Manufacturer:
DIODES/美台
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP10A13F
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1)(3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
300ms; duty cycle
4
MIN.
-100
-2.0
-0.85
TYP.
13.1
10.8
141
1.2
1.6
2.1
5.9
3.3
1.8
3.5
0.6
1.6
29
31
2%.
MAX. UNIT CONDITIONS
-0.95
1.45
-1.0
-4.0
100
1
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
= -250 A, V
= -250 A, V
= -0.6A
= -0.6A
=25°C, I
=25°C, I
ISSUE 1 - MARCH 2005
≅ 6.0 , V
= -100V, V
= -15V, I
= -50V, V
= -50V, V
= -50V, V
=±20V, V
= -10V, I
= -6V, I
= -50V, I
=0V
S
S
= -0.75A,
= -0.9A,
D
D
D
= -0.5A
D
GS
DS
GS
GS
GS
= -0.6A
= -0.6A
= -1A
GS
DS
GS
= -10V
=0V
=0V
= -5V
= -10V
=V
=0V
=0V
GS