ZXMP10A13FTA Diodes Inc, ZXMP10A13FTA Datasheet - Page 2

• Manufacturer Part Number: ZXMP10A13FTA
• Description: MOSFET Power P-Ch 100 Volt 0.7A
• Manufacturer: Diodes Inc

Specifications of ZXMP10A13FTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.7 A
• Power Dissipation: 806 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ZXMP10A13F
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
S E M I C O N D U C T O R S
(c)
(a)
(b)
A
A
=25°C
=25°C
@V
@ V
(a)
(b)
GS
GS
GS
=10V; T
=10V; T
=10V; T
(c)
A
A
A
=70°C
=25°C
=25°C
(b)
5 sec.
(b)
(b)
(a)
2
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
D
D
j
DSS
GS
, T
JA
JA
stg
-55 to +150
VALUE
LIMIT
-100
200
155
-0.7
-0.5
-0.6
-3.1
-1.1
-3.1
625
806
±20
6.4
5
ISSUE 1 - MARCH 2005
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
mW
mW
°C
A
A
A
A
A
A
V
V