SI4532ADY-T1-E3 Vishay, SI4532ADY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4532ADY-T1-E3
• Description: MOSFET Power 30V 4.9/3.9A 2W
• Manufacturer: Vishay

Specifications of SI4532ADY-T1-E3

• Transistor Polarity: N and P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.053 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.9 A @ N Channel or 3.9 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 4.9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 53mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71133
S09-0393-Rev. C, 09-Mar-09
0.30
0.24
0.18
0.12
0.06
0.00
20
16
12
0.01
8
4
0
0.1
0
0
2
1
10
-4
0.05
0.1
Duty Cycle = 0.5
0.2
0.02
V
On-Resistance vs. Drain Current
GS
3
V
= 4.5 V
DS
2
Output Characteristics
- Drain-to-Source Voltage (V)
V
I
D
Single Pulse
GS
- Drain Current (A)
6
= 10 V thru 6 V
2 V
4
10
-3
9
Normalized Thermal Transient Impedance, Junction-to-Foot
5 V
4 V
3 V
V
GS
6
12
= 10 V
Square Wave Pulse Duration (s)
15
10
8
-2
1000
800
600
400
200
10
20
16
12
0
8
4
0
-1
0
0
C
rss
1
6
V
V
GS
Transfer Characteristics
DS
2
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
Capacitance
12
3
1
C
T
iss
Vishay Siliconix
C
25 °C
= - 55 °C
4
Si4532ADY
18
5
www.vishay.com
125 °C
24
6
10
30
7
5