SI4532ADY-T1-E3 Vishay, SI4532ADY-T1-E3 Datasheet

MOSFET Power 30V 4.9/3.9A 2W

SI4532ADY-T1-E3

Manufacturer Part Number
SI4532ADY-T1-E3
Description
MOSFET Power 30V 4.9/3.9A 2W
Manufacturer
Vishay
Datasheet

Specifications of SI4532ADY-T1-E3

Transistor Polarity
N and P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.053 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.9 A @ N Channel or 3.9 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Continuous Drain Current Id
4.9A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
53mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4532ADY-T1-E3
Manufacturer:
Vishay
Quantity:
5 000
Part Number:
SI4532ADY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 914
Part Number:
SI4532ADY-T1-E3
Manufacturer:
VISHAY
Quantity:
8 000
Part Number:
SI4532ADY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4532ADY-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71133
S09-0393-Rev. C, 09-Mar-09
Ordering Information: Si4532ADY-T1-E3 (Lead (Pb-free)
PRODUCT SUMMARY
N-Channel
P-Channel
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
G
G
S
S
V
1
1
2
2
DS
- 30
30
Si4532ADY-T1-GE3 (Lead (Pb-free and Halogen-free)
(V)
1
2
3
4
Top View
J
a
0.135 at V
SO-8
N- and P-Channel 30-V (D-S) MOSFET
0.080 at V
0.075 at V
0.053 at V
= 150 °C)
a
R
DS(on)
GS
GS
a
GS
GS
8
7
6
5
= - 4.5 V
(Ω)
= - 10 V
= 4.5 V
= 10 V
D
D
D
D
1
1
2
2
Steady State
Steady State
a
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A
= 25 °C, unless otherwise noted
I
D
- 3.9
- 3.0
4.9
4.1
(A)
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
I
I
thJA
thJF
DS
GS
D
S
D
stg
FEATURES
• Halogen-free According to IEC 61249-2-21
G
Available
TrenchFET
1
10 s
4.9
3.9
1.7
1.3
Typ.
2
55
90
40
N-Channel MOSFET
N-Channel
N-Channel
± 20
30
Steady State
D
S
®
1
1
Power MOSFETs
0.94
1.13
0.73
Max.
3.7
2.9
62.5
110
50
- 55 to 150
20
G
2
10 s
- 3.9
- 3.1
- 1.7
1.3
Typ.
2
P-Channel MOSFET
54
87
34
P-Channel
P-Channel
Vishay Siliconix
± 20
- 30
Steady State
S
D
Si4532ADY
2
2
- 3.0
- 2.4
- 1.0
0.76
1.2
Max.
62.5
105
45
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI4532ADY-T1-E3

SI4532ADY-T1-E3 Summary of contents

Page 1

... SO Top View Ordering Information: Si4532ADY-T1-E3 (Lead (Pb-free) Si4532ADY-T1-GE3 (Lead (Pb-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4532ADY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Drain Current (A) D On-Resistance vs. Drain Current 4 Total Gate Charge (nC) g Gate Charge Document Number: 71133 S09-0393-Rev. C, 09-Mar- 2.5 3.0 3.5 4 Si4532ADY Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 600 500 C iss 400 300 200 C oss 100 C rss ...

Page 4

... Si4532ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 I 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 5

... 0.12 0.06 0. Drain Current (A) D On-Resistance vs. Drain Current Document Number: 71133 S09-0393-Rev. C, 09-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4532ADY Vishay Siliconix - ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 1000 800 C iss 600 400 C 200 oss ...

Page 6

... Si4532ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3 Total Gate Charge (nC) g Gate Charge 150 ° 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1 250 µ ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71133. Document Number: 71133 S09-0393-Rev. C, 09-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 0. Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4532ADY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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