SI7336ADP-T1-GE3 Vishay, SI7336ADP-T1-GE3 Datasheet

MOSFET Power 30V 30A 5.4W 3.0mohm @ 10V

SI7336ADP-T1-GE3

Manufacturer Part Number
SI7336ADP-T1-GE3
Description
MOSFET Power 30V 30A 5.4W 3.0mohm @ 10V
Manufacturer
Vishay
Datasheet

Specifications of SI7336ADP-T1-GE3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.003 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
5400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO
Continuous Drain Current Id
30A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
4mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1V
Power Dissipation Pd
5.4W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7336ADP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73152
S-80440-Rev. F, 03-Mar-08
Ordering Information: Si7336ADP-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
30
(V)
8
6.15 mm
D
7
D
0.0040 at V
0.0030 at V
6
D
PowerP AK SO-8
R
Bottom V i e w
Si7336ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
DS(on)
D
GS
GS
(Ω)
1
= 4.5 V
J
a
= 10 V
S
= 150 °C)
a
2
S
N-Channel 30-V (D-S) MOSFET
3
S
a
5.15 mm
4
I
D
G
30
27
(A)
a
b, c
A
= 25 °C, unless otherwise noted
Q
Steady State
Steady State
g
L = 0.1 mH
T
T
T
T
(Typ.)
36
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free available
• Ultra-Low On-Resistance Using High
• Q
• New Low Thermal Resistance PowerPAK
• 100 % R
• 100 % UIS Tested
• Low-Side DC/DC Conversion
Symbol
Symbol
T
R
R
Density TrenchFET
MOSFET Technology
Low 1.07 mm Profile
- Notebook
- Server
- Workstation
J
V
V
I
I
P
, T
DM
I
I
AS
thJA
thJC
GS
g
DS
D
S
D
stg
Optimized
g
Tested
Typical
1.0
18
50
G
N-Channel MOSFET
®
- 55 to 150
Gen II Power
Limits
± 20
260
4.5
5.4
3.4
30
30
25
70
50
D
S
Maximum
1.5
23
65
Vishay Siliconix
Si7336ADP
®
www.vishay.com
Package with
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI7336ADP-T1-GE3 Summary of contents

Page 1

... Bottom Ordering Information: Si7336ADP-T1-E3 (Lead (Pb)-free) Si7336ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) Avalanche Current a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7336ADP Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73152 S-80440-Rev. F, 03-Mar- 0.015 0.012 0.009 0.006 °C J 0.003 0.000 0.8 1.0 1.2 Si7336ADP Vishay Siliconix 7000 6000 C iss 5000 4000 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Capacitance 1 1 ...

Page 4

... Si7336ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA 0.2 D 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 100 125 150 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73152. Document Number: 73152 S-80440-Rev. F, 03-Mar- Square Wave Pulse Duration (s) Si7336ADP Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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