2N3819-E3 Vishay, 2N3819-E3 Datasheet - Page 4

• Manufacturer Part Number: 2N3819-E3
• Description: JFET 25V 10mA
• Manufacturer: Vishay

Specifications of 2N3819-E3

• Configuration: Single
• Transistor Polarity: N-Channel
• Package / Case: TO-226AA
• Gate-source Breakdown Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 25 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Breakdown Voltage Vbr: -35V
• Gate-source Cutoff Voltage Vgs(off) Max: -8V
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2N3819
Vishay Siliconix
www.vishay.com
7-4
300
240
180
120
10
60
0
8
6
4
2
0
5
4
3
2
1
0
0.1
0
0
Transconductance vs. Gate-Source Voltage
V
T
f = 1 MHz
A
T
GS(off)
A
V
Common-Source Input Capacitance
= –55_C
125_C
DS
= –55_C
On-Resistance vs. Drain Current
–0.4
= 0 V
–4
= –2 V
V
V
vs. Gate-Source Voltage
GS
GS
I
– Gate-Source Voltage (V)
– Gate-Source Voltage (V)
D
V
– Drain Current (mA)
–0.8
GS(off)
–8
V
DS
25_C
= 10 V
= –2 V
1
–1.2
–12
–3 V
V
f = 1 kHz
DS
–1.6
–16
= 10 V
–20
_
–2
10
100
3.0
2.4
1.8
1.2
0.6
10
80
60
40
20
8
6
4
2
0
0
0
0.1
0
0
Transconductance vs. Gate-Source Voltgage
V
GS(off)
Circuit Voltage Gain vs. Drain Current
Capacitance vs. Gate-Source Voltage
f = 1 MHz
Common-Source Reverse Feedback
T
A
125_C
–0.6
–4
= –3 V
= –55_C
V
DS
V
V
GS
GS
= 0 V
V
Assume V
A
R
GS(off)
I
V
D
– Gate-Source Voltage (V)
– Gate-Source Voltage (V)
L
– Drain Current (mA)
+
+
–1.2
–8
V
= –2 V
10 V
DS
1 ) R
I
D
DD
g
= 10 V
fs
25_C
1
= 15 V, V
R
–3 V
S–04028—Rev. D ,04-Jun-01
L
–1.8
L
g
–12
Document Number: 70238
os
DS
V
f = 1 kHz
= 5 V
DS
–2.4
–16
= 10 V
–20
–3
10