2N3819-E3 Vishay, 2N3819-E3 Datasheet

JFET 25V 10mA

2N3819-E3

Manufacturer Part Number
2N3819-E3
Description
JFET 25V 10mA
Manufacturer
Vishay
Datasheet

Specifications of 2N3819-E3

Configuration
Single
Transistor Polarity
N-Channel
Package / Case
TO-226AA
Gate-source Breakdown Voltage
- 25 V
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 25 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Breakdown Voltage Vbr
-35V
Gate-source Cutoff Voltage Vgs(off) Max
-8V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
The 2N3819 is a low-cost, all-purpose JFET which offers good
performance at mid-to-high frequencies. It features low noise
and leakage and guarantees high gain at 100 MHz.
Gate-Source/Gate-Drain Voltage
Forward Gate Current
Storage Temperature
Operating Junction Temperature
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
D Excellent High-Frequency Gain:
D Very Low Noise: 3 dB @ 400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: A
Gps 11 dB @ 400 MHz
V
GS(off)
v –8
(V)
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 60 @ 100 mA
V
(BR)GSS
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–25
Min (V)
g
fs
Min (mS)
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
2
N-Channel JFET
–55 to 150_C
–55 to 150_C
G
D
S
10 mA
–25 V
TO-226AA
I
Top View
DSS
(TO-92)
1
2
3
Min (mA)
2
Its TO-226AA (TO-92) package is compatible with various
tape-and-reel
Packaging Information). For similar products in TO-206AF
(TO-72)
2N4416/2N4416A/SST4416 data sheet.
Lead Temperature (
Power Dissipation
Notes
a.
Derate 2.8 mW/_C above 25_C
and
a
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
options
/
16
TO-236
” from case for 10 sec.)
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
for
(SOT-23)
automated
Vishay Siliconix
. . . . . . . . . . . . . . . . . . .
packages,
assembly
2N3819
www.vishay.com
see
350 mW
300_C
(see
the
7-1

Related parts for 2N3819-E3

2N3819-E3 Summary of contents

Page 1

... D High ac/dc Switch Off-Isolation D High Gain 100 mA V The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz. Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

... Vishay Siliconix _ Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage b Saturation Drain Current Gate Reverse Current c Gate Operating Current Drain Cutoff Current Drain-Source On-Resistance Gate-Source Voltage Gate-Source Forward Voltage Dynamic c Common-Source Forward Transconductance c Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance ...

Page 3

... Document Number: 70238 S–04028—Rev. D ,04-Jun- GSS 125_C 25_C GSS –0.2 V –0.4 V –0.6 V –0.8 V –1.0 V –1.2 V –1 –1.6 –2 2N3819 Vishay Siliconix Common-Source Forward Transconductance vs. Drain Current – (off kHz –55_C A 6 25_C 4 125_C – Drain Current (mA) D Output Characteristics ...

Page 4

... Vishay Siliconix Transconductance vs. Gate-Source Voltage –2 V GS(off –55_C A 6 25_C 4 125_C –0.4 –0.8 –1.2 V – Gate-Source Voltage (V) GS On-Resistance vs. Drain Current 300 T = –55_C A 240 V = –2 V GS(off) 180 120 – Drain Current (mA) D Common-Source Input Capacitance vs. Gate-Source Voltage MHz –4 – ...

Page 5

... V GS(off DSS 0 10 100 – Frequency (Hz) Document Number: 70238 S–04028—Rev. D ,04-Jun- 500 1000 –b rs –g rs 500 1000 100 k 2N3819 Vishay Siliconix Forward Admittance 100 T = 25_C Common Source – 0.1 100 200 500 f – Frequency (MHz) Output Admittance 25_C Common Source ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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